GaN High Power PIN Diode Switch

Safari Microwave’s GaN High Power PIN Diode Switches are designed to operate across a wide frequency range, making them suitable for various high-power applications.

Key Features:

1. Frequency Range: Covers a broad spectrum from 0.02 GHz to 40 GHz, ensuring flexibility for diverse applications.
2. Insertion Loss: Low insertion loss ranging from <0.7 dB to <2.1 dB, depending on the frequency band, ensuring minimal signal attenuation.
3. Power Handling: Capable of handling power levels up to 200 W, making these switches robust for high-power applications.
4. Isolation: Provides isolation levels from >30 dB to >55 dB, ensuring excellent separation between channels to prevent signal interference.
5. Switching Time: Fast switching times of less than 100 ns, enabling rapid signal path changes essential for high-speed systems.
6. VSWR (Voltage Standing Wave Ratio): Maintains a stable VSWR from <1.3 to <2.2, ensuring efficient power transfer and minimal signal reflection.

Applications:

• Telecommunications: Enhances signal routing in high-power communication systems, ensuring reliable and efficient operation.
• Radar Systems: Provides precise and reliable control over signal paths, improving radar performance in both military and civilian applications.
• Test and Measurement: Suitable for automated test equipment (ATE) and other testing environments requiring rapid and reliable signal switching.
• Broadcasting: Ensures stable and clear signal transmission in high-frequency broadcasting systems, contributing to overall broadcast quality.
• Military and Aerospace: Supports mission-critical operations where high-power, reliable switching is essential in harsh environments.

 

These specifications make the GaN High Power PIN Diode Switches ideal for use in high-frequency, high-power environments, such as RF and microwave systems, where reliability and performance are critical.